reactive ion etching
英 [riˈæktɪv ˈaɪən ˈetʃɪŋ]
美 [riˈæktɪv ˈaɪən ˈetʃɪŋ]
网络 反应离子刻蚀; 反应离子刻蚀设备; 活性离子蚀刻; 反应性离子蚀刻; 反应离子蚀刻
双语例句
- Inductively coupled plasma reactive ion etching of InSb photovoltaic detector arrays
InSb阵列探测芯片的感应耦合等离子反应刻蚀研究 - An Investigation of Reactive Ion Etching for Through Silicon Via Packaging Technology
反应离子刻蚀在穿透硅通孔封装技术中的应用研究 - Research on the Technological Factors for the Reactive Ion Etching
反应离子刻蚀工艺因素研究 - Reactive Ion Etching in TFT
TFT工艺中的反应性离子刻蚀 - The optical rib waveguides are designed and fabricated with SIMOX SOI wafers, using inductive coupled plasma reactive ion etching ( ICPRIE) process.
采用电感耦合反应离子刻蚀制备SOI脊形光波导器件，并给出了工艺流程。 - Study on fabrication of silicon-based photon crystal slab with lithography and reactive ion etching is carried out.
用光刻和反应离子刻蚀的方法对硅材料光子晶体板的制作进行了研究。 - The experiment of fully automatic reactive ion etching on 3 inch GaAs wafer is described.
介绍了全自动反应离子腐蚀3英寸GaAs片的实验研究工作。 - The development of soft X-ray CZP included design of optical path, selection of material, preparation of thin film, sub-micron lithography, X-ray lithography, reactive ion etching, ion beam etching, electroplating and chemical etching.
软X射线聚焦波带片的研制包括光路设计、膜系设计、衬底选择、薄膜制备、亚微米光刻、X射线光刻、反应离子刻蚀、离子束刻蚀、电镀和化学腐蚀等多种微细加工技术。 - The deep reactive ion etching device is mainly applied to etching Si materials in the MEMS fabrications area.
深反应离子刻蚀（DRIE）设备，主要应用于MEMS器件制造中Si材料的深槽刻蚀[1]。 - A study of a simple reactive ion etching ( rie) apparatus with a magnetic multipole containment
一种简单多极磁约束的反应离子刻蚀装置的研究 - Reactive ion etching of polysilicon using SF6+ Ar reactive gas is investigated.
本文对以SF6+Ar为反应气体的反应离子刻蚀（RIE）多晶硅工艺进行了研究。 - Study on Magnetically Enhanced Reactive Ion Etching of BST Thin Films
BST薄膜的磁增强反应离子刻蚀研究 - CH_4/ H_2 mixtures can be used for reactive ion etching of InP at room temperature.
CH4/H1混合气可以在室温下对InP进行反应离子腐蚀。 - Effect of Gas Species on the Depth Reduction in Silicon Deep-Submicron Trench Reactive Ion Etching
在硅深－亚微米沟道反应离子刻蚀中气体成分对深度减小的影响 - Hardware's interface electrocircuit and designing idea of the reactive ion etching machine is explained in this thesis.
本文详细讨论了计算机控制的反应离子刻蚀机各个部分的硬件接口电路和设计思想。 - Refractory metals multilayer, grown on silica coated Si wafer, was etched by reactive ion etching ( RIE).
分析了用反应离子刻蚀（RIE）系统刻蚀多层难熔金属的可行性。 - Reactive Ion Etching of SiO_2 in Planar Lightwave Circuit Fabrication
SiO2平面光波导工艺中的反应离子刻蚀研究 - Study on Anisotropic Etching in Reactive Ion Etching of PMMA
反应离子刻蚀PMMA的各向异性刻蚀研究 - A ten-element InGaAs strained-layer single quantum well laser phased array coupled with corner reflectors ( CRLA) was designed and fabricated by using reactive ion etching ( RIE).
采用反应离子刻蚀技术，设计、制备了一种角反射器耦合的10单元InGaAs应变层单量子阱镇相列阵激光器。 - Lithography and Reactive Ion Etching of Silicon-Based Photon Crystal Slab
硅基光子晶体板的光刻和反应离子刻蚀 - Study on Reactive Ion Etching of Silicon in SF_6/ O_2/ CHF_3 Mixtures
SF6/O2/CHF3混合气体对硅材料的反应离子刻蚀研究 - Reactive Ion Etching of InP in CH_4/ H_2 Mixtures
采用CH4/H2混合气对InP进行反应离子腐蚀的研究 - Study on deep reactive ion etching of silicon using sf_6/ ccl_2f_2 with o_2 addition
SF6／CCl2F2反应离子深刻蚀硅中加O2的研究 - Reactive Ion Etching of Sol Gel Derived PZT Ferroelectric Thin Films and Pt/ Ti Bottom
Sol-Gel法制备的铁电薄膜和Pt/Ti下电极的反应离子刻蚀技术 - This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching ( DRIE) process is employed.
加速度计用普通的N型硅片制造，为了刻蚀高深宽比的结构，使用了深反应离子刻蚀（DRIE）工艺。 - In this paper, we use polymer ( PS) masking method, combining with the reactive ion etching, controllable physical deposition, and chemical depositing reaction.
在本文中，我们通过聚合物（PS）掩蔽，结合反应性离子刻蚀及物理可控沉积和化学沉积反应，制备修饰区域可控的多元不对称微粒。 - A bi-layer mask process is proposed and the technique of magnetic enhanced reactive ion etching ( MERIE) of SiC was studied to determine the optimal processing parameters.
提出了一种使用双层掩膜刻蚀SiC的方法，对磁增强反应离子刻蚀（MERIE）SiC的工艺进行了详细研究，得到了刻蚀的优化参数，为SiC热辐射器件的制作打下基础。 - In this thesis, the issue is addressed and investigated in detail. First, a new method to fabricate the gradient silicon surface based on multi-window reactive ion etching technology is proposed.
本文针对该问题开展深入研究。首先，研究了基于多窗口反应离子刻蚀技术的倾斜表面制备方法。 - The patterning of SiNx film was done by the micromachining technologies of semiconductor technologies, mainly including photo-lithography and etching, and in this paper the patterning of mask layer was done by projection exposure method and reactive ion etching ( RIE).
SiNx薄膜的图案化工作采用的是半导体工艺中微细加工技术，主要包括光刻与刻蚀工艺，实验中采用投影式曝光及反应离子刻蚀（RIE）的方法来完成该掩模的图案化。